شماره فنی : PM50RLA120
برند : MITSUBISHI
دسته بندی : IGBT IPM
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1μm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation
upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
d) Current rating of brake part increased.
50% for the current rating of inverter part.
• 3φ 50A, 1200V Current-sense IGBT type inverter
• 25A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit,
over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 5.5kW/7.5kW class inverter application